Structural study of degraded ZnMgSSe blue light emitters

被引:22
作者
Nakano, K
Tomiya, S
Ukita, M
Yoshida, H
Itoh, S
Morita, E
Ikeda, M
Ishibashi, A
机构
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240
关键词
blue laser; degradation; dislocation; stacking fault; ZnMgSSe;
D O I
10.1007/BF02666246
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using electroluminescence (EL) topography and transmission electron microscopy (TEM), we investigated the nonluminescent regions which form while current is being injected into ZnMgSSe/ZnSSe/ZnCdSe-based blue light emitters. Small dark spots were observed just after turn-on and spread out, forming rough nonluminescent triangles in the [100] directions in the EL image of the active region. TEM studies showed that the small dark spots are pre-existing stacking faults originating at the substrate/epitaxial layer interface. The nonluminescent triangles were found to be a dense region of dislocation dipoles and dislocation loops. Each dipole was aligned along two [110] directions in the {111} planes. The Burgers vectors were of the type a/2[011] inclined at 45 degrees to the (001) junction plane.
引用
收藏
页码:213 / 216
页数:4
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