PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS

被引:50
作者
HAUGEN, GM
GUHA, S
CHENG, H
DEPUYDT, JM
HAASE, MA
HOFLER, GE
QIU, J
WU, BJ
机构
[1] Photonics Research Laboratory, 3M Company, 3M Center, St. Paul, MN 55144-1000
关键词
D O I
10.1063/1.114212
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence imaging was used to study photodegradation in CdZnSe quantum wells, important to II-VI based blue-green light emitter technology. The observed degradation microstructure evolves similarly to features observed during CdZnSe based LED and laser operation. Degradation is shown to emanate from pre-existing defects to form dark line defects along the 〈100〉 directions. We report an observation of a mobile defect in II-VI materials that is the precursor to the 〈100〉 dark line defects. © 1995 American Institute of Physics.
引用
收藏
页码:358 / 360
页数:3
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