THRESHOLD FOR OPTICALLY INDUCED DISLOCATION GLIDE IN GAAS-ALGAAS DOUBLE HETEROSTRUCTURES - DEGRADATION VIA A NEW COOPERATIVE PHENOMENON

被引：47

作者：

MONEMAR, B ^{[1
]}

POTEMSKI, RM ^{[1
]}

SMALL, MB ^{[1
]}

VANVECHTEN, JA ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.41.260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：260 / 264

页数：5

共 23 条

[1]

Antoncik E., 1955, CZECH J PHYS, V5, P449

[2]

Brooks H., 1955, ADV ELECTRON, V7, P121

[3] DISLOCATION VELOCITIES IN GAAS [J].

CHOI, SK ;

MIHARA, M ;

NINOMIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745

[4] ELECTRON-MICROSCOPE STUDY OF 10.6-MUM LASER DAMAGE IN GAAS [J].

COMER, JJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1780-1784

[5]

Erofeeva S. A., 1973, Soviet Physics - Solid State, V15, P538

[6] DISLOCATION INERTIAL MODEL FOR INCREASED PLASTICITY OF SUPERCONDUCTING STATE [J].

GRANATO, AV .

PHYSICAL REVIEW LETTERS, 1971, 27 (10) :660-&

[7] CATASTROPHIC FAILURE IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3907-3912

[8] EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS [J].

HEINE, V ;

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1976, 13 (04) :1622-1626

[9] OBSERVATION OF DARK LINE DEFECTS IN GAP GREEN LEDS UNDER AN EXTERNAL UNIAXIAL STRESS [J].

IWAMOTO, M ;

KASAMI, A .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :591-592

[10] INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER [J].

KAMEJIMA, T ;

ISHIDA, K ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :233-240

← 1 2 3 →