Time-resolved luminescence studies in an n-type Zn1-xCdxSe/ZnSySe1-y quantum well

被引：9

作者：

Nakano, K ^{[1
]}

Kishita, Y ^{[1
]}

Itoh, S ^{[1
]}

Ikeda, M ^{[1
]}

Ishibashi, A ^{[1
]}

Strauss, U ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70506 STUTTGART,GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.53.4722

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recombination processes in an n-type Zn1-xCdxSe/ZnSySe1-y quantum well are investigated by time-resolved photoluminescence measurements. The combined analysis of the luminescence decay time and intensity yields the temperature dependence of the radiative and nonradiative recombination time. The quantum efficiency at a low temperature of 8 K is close to unity and the nonradiative recombination rate increases as the temperature is raised. The large effective radiative recombination coefficient of 1.4x10(-9) cm(3)/s at 300 K is attributed to excitonic enhancement, even at 300 K.

引用

页码：4722 / 4728

页数：7

共 47 条

[1] RADIATIVE LIFETIME OF FREE-EXCITONS IN QUANTUM-WELLS [J].

ANDREANI, LC ;

TASSONE, F ;

BASSANI, F .

SOLID STATE COMMUNICATIONS, 1991, 77 (09) :641-645

[2] RECOMBINATION LIFETIME OF CARRIERS IN GAAS-GAALAS QUANTUM WELLS NEAR ROOM-TEMPERATURE [J].

ARAKAWA, Y ;

SAKAKI, H ;

NISHIOKA, M ;

YOSHINO, J ;

KAMIYA, T .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :519-521

[3] EXCITON DYNAMICS IN INXGA1-XAS/GAAS QUANTUM-WELL HETEROSTRUCTURES - COMPETITION BETWEEN CAPTURE AND THERMAL EMISSION [J].

BACHER, G ;

HARTMANN, C ;

SCHWEIZER, H ;

HELD, T ;

MAHLER, G ;

NICKEL, H .

PHYSICAL REVIEW B, 1993, 47 (15) :9545-9555

[4] INFLUENCE OF BARRIER HEIGHT ON CARRIER DYNAMICS IN STRAINED INXGA1-XAS GAAS QUANTUM-WELLS [J].

BACHER, G ;

SCHWEIZER, H ;

KOVAC, J ;

FORCHEL, A ;

NICKEL, H ;

SCHLAPP, W ;

LOSCH, R .

PHYSICAL REVIEW B, 1991, 43 (11) :9312-9315

[5] EXCITON DYNAMICS FOR EXTENDED MONOLAYER ISLANDS IN THIN IN0.53GA0.47AS/INP QUANTUM-WELLS [J].

BACHER, G ;

KOVAC, J ;

STREUBEL, K ;

SCHWEIZER, H ;

SCHOLZ, F .

PHYSICAL REVIEW B, 1992, 45 (16) :9136-9144

[6] DECAY MEASUREMENTS OF FREE-EXCITON AND BOUND-EXCITON RECOMBINATION IN DOPED GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

BERGMAN, JP ;

HOLTZ, PO ;

MONEMAR, B ;

SUNDARAM, M ;

MERZ, JL ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1991, 43 (06) :4765-4770

[7] EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE [J].

BIMBERG, D ;

CHRISTEN, J ;

WERNER, A ;

KUNST, M ;

WEIMANN, G ;

SCHLAPP, W .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :76-78

[8] THERMALLY ACTIVATED CARRIER ESCAPE MECHANISMS FROM INXGA1-XAS/GAAS QUANTUM-WELLS [J].

BOTHA, JR ;

LEITCH, AWR .

PHYSICAL REVIEW B, 1994, 50 (24) :18147-18152

[9] RECOMBINATION PROCESSES AND PHOTOLUMINESCENCE INTENSITY IN QUANTUM-WELLS UNDER STEADY-STATE AND TRANSIENT CONDITIONS [J].

BRANDT, O ;

KANAMOTO, K ;

GOTODA, M ;

ISU, T ;

TSUKADA, N .

PHYSICAL REVIEW B, 1995, 51 (11) :7029-7037

[10] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J].

CHRISTEN, J ;

BIMBERG, D ;

STECKENBORN, A ;

WEIMANN, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :84-86

← 1 2 3 4 5 →