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Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes

被引：37
作者：
Law, KK
Baude, PF
Miller, TJ
Haase, MA
Haugen, GM
Smekalin, K
机构：
[1] Photonics Research Laboratory, 3M Center, 201-1N-35, St. Paul
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 04期
关键词：
semiconductor junction lasers; II-VI semiconductors; visible semiconductor lasers;
D O I：
10.1049/el:19960249
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser diodes based on wide-gap II-VI semiconductors with lifetimes > 3h has been demonstrated. The density of stacking faults and threading dislocations present inside the laser diodes is similar to 5 x 10(4)/cm(2). Laser emission was observed at a wavelength of similar to 529nm with a threshold current density of similar to 460A/cm(2) and a threshold voltage of similar to 5V in index-guided CdZnSSe/ZnSSe/MgZnSSe separate-confinement heterostructure laser diodes.
引用
收藏
页码：345 / 346
页数：2
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