DARK-LINE-RESISTANT DIODE-LASER AT 0.8 -MU-M COMPRISING INALGAAS STRAINED QUANTUM-WELL

被引：35

作者：

WATERS, RG

DALBY, RJ

BAUMANN, JA

DESANCTIS, JL

SHEPARD, AH

机构：

[1] Opto-Electronics Center, McDonnell Douglas Electronic Systems Company, Elmsford

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum-well lasers emitting at 0.8-mu-m and resistant to <100> dark-line propagation are demonstrated for the first time. The devices, which replace AlGaAs by InAlGaAs in the quantum-well active region, have the potential to be used as reliability-enhanced diode pump sources.

引用

收藏

页码：409 / 411

页数：3

相关论文

共 17 条

[1] LOW DEGRADATION RATE IN STRAINED INGAAS/ALGAAS SINGLE QUANTUM-WELL LASERS [J].

BOUR, DP ;

GILBERT, DB ;

FABIAN, KB ;

BEDNARZ, JP ;

ETTENBERG, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :173-174

[2] INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].

CHOI, HK ;

WANG, CA .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323

[3] LONG-LIVED INGAAS QUANTUM WELL LASERS [J].

FISCHER, SE ;

WATERS, RG ;

FEKETE, D ;

BALLANTYNE, JM ;

CHEN, YC ;

SOLTZ, BA .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1861-1862

[4]

GARBUZOV DZ, 1990, 12TH IEEE INT SEM LA

[5] DISLOCATION PINNING IN GAAS BY DELIBERATE INTRODUCTION OF IMPURITIES [J].

KIRKBY, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :562-568

[6] HIGH-POWER OPERATION OF HIGHLY RELIABLE NARROW STRIPE PSEUDOMORPHIC SINGLE QUANTUM-WELL LASERS EMITTING AT 980 NM [J].

LARSSON, A ;

FOROUHAR, S ;

CODY, J ;

LANG, RJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (05) :307-309

[7] DEGRADATION KINETICS OF GAAS QUANTUM WELL LASERS [J].

MADHAVAMENON, EC ;

PETROFF, PM ;

WATERS, RG .

APPLIED PHYSICS LETTERS, 1989, 54 (26) :2683-2685

[8] STABLE OPERATION (OVER 5000-H) OF HIGH-POWER 0.98-MUM INGAAS GAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS [J].

OKAYASU, M ;

FUKUDA, M ;

TAKESHITA, T ;

UEHARA, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) :689-691

[9]

PETROFF PM, 1985, SEMICONDUCT SEMIMET, V22, P379

[10] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M [J].

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE ;

MEEHAN, K ;

ZARRABI, JH .

ELECTRONICS LETTERS, 1988, 24 (24) :1493-1494