Phosphorus-doped Si nanocrystallites embedded in SiO2 films

被引：10

作者：

Makimura, T ^{[1
]}

Yamamoto, Y ^{[1
]}

Mitani, S ^{[1
]}

Mizuta, T ^{[1
]}

Li, CQ ^{[1
]}

Takeuchi, D ^{[1
]}

Murakami, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 197卷

关键词：

Si nanocrystallites; phosphorus doping; visible photoluminescence; electron spin resonance; hyperfine structure;

D O I：

10.1016/S0169-4332(02)00438-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We fabricated P-doped Si nanocrystallites embedded in SiO2 films and have investigated by photoluminescence (PL) spectroscopy and electron spin resonance (ESR) spectroscopy. The films were fabricated by annealing of P-doped SiOx films that were deposited by laser ablation of P2O5-coated Si targets in O-2 gas. Visible PL from nanocrystallites is enhanced at room temperature by 10 times as intense as undoped ones. ESR spectroscopy revealed that deposition at high energy density is effective for defect-free deposition. Furthermore, P atoms are found to be doped in the crystallites and electron-hole pairs bound to the P atoms are suggested to be responsible for the enhanced PL. In addition, we found a P-related center located at interface region between P-doped films of Si nanocrystallites and Si substrates, with a large hyperfine splitting of similar to80 G observed at 20 and 40 K. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：670 / 673

页数：4

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