c-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7-delta/SrTiO3 and NdGaO3

Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7-delta/(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Angstrom steps at a condensation temperature of 700 degrees C, Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7-delta/(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T = 300 K, f = 100 kHz), and tan delta approximate to 0.04. (C) 1997 American Institute of Physics.