Low temperature solid-state synthesis routine and mechanism for Li3V2(PO4)3 using LiF as lithium precursor

被引:102
作者
Fu, Peng
Zhao, Yanming [1 ]
Dong, Youzhong
An, Xiaoning
Shen, Guopei
机构
[1] S China Univ Technol, Sch Phys, Guangzhou 510640, Peoples R China
[2] S China Univ Technol, Sch Chem, Guangzhou 510640, Peoples R China
[3] Guangzhou Hongsen Mat Co Ltd, Guangzhou 510760, Guangdong, Peoples R China
关键词
LiF; Li3V2(PO4)(3); Li-precursor; FT-IR; lithium vanadium phosphates;
D O I
10.1016/j.electacta.2006.06.039
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Monoclinic lithium vanadium phosphate, Li3V2(PO4)(3), has been successfully synthesized using LiF as lithium source. The one-step reaction with stoichiometric composition and relative lower sintering temperature (700 degrees C) has been used in our experimental processes. The solid-state reaction mechanism using LiF as lithium precursor has been studied by X-ray diffraction and Fourier transform infrared spectra. The Rietveld refinement results show that in our product sintered at 700 degrees C no impurity phases of VPO4, Li5V(PO4)(2)F-2, or LiVPO4F can be detected. The solid-state reaction using Li2CO3 as Li-precursor has also been carried out for comparison. X-ray diffraction patterns indicate that impurities as Li3PO4 can be found in the product using Li2CO3 as Li-precursor unless the sintering temperatures are higher than 850 degrees C. An abrupt particle growth (about 2 mu m) has also been observed by scanning electron microscope for the samples sintered at higher temperatures, which can result in a poor cycle performance. The product obtained using LiF as Li-precursor with the uniform flake-like particles and smaller particle size (about 300nm) exhibits the better performance. At the 50th cycle, the reversible specific capacities for Li3V2(PO4)(3) measured between 3 and 4.8 V at 1C rate are found to approach 147.1 mAh/g (93.8% of initial capacity). The specific capacity of 123.6 mAh/g can even be hold between 3 and 4.8 V at 5C rate. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1003 / 1008
页数:6
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