Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime

被引:22
作者
Ciesla, CM
Murdin, BN
Phillips, TJ
White, AM
Beattie, AR
Langerak, CJCM
Elliott, CT
Pidgeon, CR
Sivananthan, S
机构
[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND
[2] DEF RES AGCY,MALVERN WR14 3PS,WORCS,ENGLAND
[3] RIJNHUIZEN,FOM,INST PLASMA PHYS,NL-3430 BE NIEUWEGEIN,NETHERLANDS
[4] UNIV ILLINOIS,DEPT PHYS,MICROPHYS LAB,CHICAGO,IL 60607
关键词
D O I
10.1063/1.119588
中图分类号
O59 [应用物理学];
学科分类号
摘要
A direct measurement of carrier recombination, far from equilibrium, in Hg0.795Cd0.205Te (N-d - N-a = 3.3 X 10(14) cm(-3)) has been made on a picosecond time scale with a pump-probe technique using a free-electron laser. Over the range of carrier densities (5 X 10(16)-3 X 10(17) cm(-3)) and at the temperatures (50-300 K) studied experimentally, contributions to the recombination from Auger, Shockley-Read-Hall, and radiative mechanisms were calculated using an analytic approximation, with carrier degeneracy included, Auger-1 (CCCH) recombination rates were calculated, which also gave the Auger-7 (CHHL) rates via a simple relationship. Excellent agreement was obtained, with Auger-1 dominant at all temperatures and, significantly, for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important. (C) 1997 American Institute of Physics.
引用
收藏
页码:491 / 493
页数:3
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