Effect of the stack layer on the electrical properties of Ta2O5 gate dielectrics deposited on strained-Si0.82Ge0.18 substrates

被引：14

作者：

Chatterjee, S ^{[1
]}

Samanta, SK

Banerjee, HD

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, ECE, Kharagpur 721302, W Bengal, India

[3] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 09期

关键词：

D O I：

10.1088/0268-1242/17/9/316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stacked SiO2/Ta2O5 and Si2ON2/Ta2O5 films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature in a microwave plasma using O-2, NO and tantalum pentaethoxide. The stacked films are compared on the basis of electrical parameters determined using high-frequency capacitance-voltage and current-voltage characteristics, before and after the electrical stressing of the metal-insulator-semiconductor capacitor structures. With the help of constraint theory, we explain the chemical bonding issues at various interfaces (such as substrate-dielectric and dielectric-dielectric) in the plasma-grown oxides and stacked high-k dielectrics. In this paper, we show that the stacked Si2ON2/Ta2O5 films are superior to SiO2/Ta2O5 structures due to the enhanced incorporation of nitrogen.

引用

页码：993 / 998

页数：6

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