Characterization of strained epitaxial Si1-xGex films grown using Gas Source Molecular Beam Epitaxy

State-of-the-art silicon-germanium heteroepitaxy techniques are reviewed, Strained Si1-xGex epitaxial films have been grown by Gas Source Molecular Beam Epitaxy (GSMBE) on p-Si, The films have been characterised using Rutherford Backscattering Spectroscopy (RES), X-ray Photoelectron Spectroscopy (XPS), Spectroscopic Ellipsometry (SE), High Resolution X-ray Diffractometry (HXRD) for the crystalline quality of the epitaxial layer and Ge concentration, Atomic Force Microscopy (AFM) has been used for the determination of surface roughness for the study of the growth morphology.