Preparation of Poly(4-hydroxystyrene) Based Functional Block Copolymer Through Living Radical Polymerization and Its Nanocomposite with BaTiO3 for Dielectric Material

被引:5
作者
Lee, Yeon Ju [1 ]
Jang, Yunseok [2 ]
Cho, Kilwon [2 ]
Pyo, Seungmoon [3 ]
Hwang, Do-Hoon [4 ]
Hong, Sung Chul [1 ]
机构
[1] Sejong Univ, Dept Nano Sci & Technol, Seoul 143747, South Korea
[2] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
[3] Konkuk Univ, Dept Chem, Seoul 143701, South Korea
[4] Kumoh Natl Inst Technol, Dept Appl Chem, Gumi 730701, South Korea
关键词
Nitroxide Mediated Polymerization; Poly(4-hydroxystyrene); Maleic Acid; Nanocomposite; Dielectric Material; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; ELECTRONICS; COMPOSITES; INSULATOR; MOBILITY; DESIGN;
D O I
10.1166/jnn.2009.1628
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Poly(4-hydroxystyrene) block copolymers containing maleic acid groups in one block were prepared through nitroxide mediated polymerization and their thin films with or without BaTiO3 nanoparticles were evaluated as a solution-processable dielectric materials. Poly(4-hydroxystyrene-co-maleic acid)-block-poly(4-hydroxystyrene) was successfully prepared through the hydrolysis of poly(4-acetoxystyrene-co-maleic an hydride)-block-poly(4-acetoxystyrene), as evidenced by GC, GPC, FT-IR and NMR. Through the incorporation of maleic acid group and BaTiO3 nanoparticles to poly(4-hydroxystyrene), higher dielectric constant was observed, suggesting that the dielectric constants of the composite films were strongly affected by the structural and compositional characteristics of polymers and nanocomposites.
引用
收藏
页码:7161 / 7166
页数:6
相关论文
共 21 条
[1]  
[Anonymous], 1981, SPECTROMETRIC INDENT
[2]   Nanoparticle polymer composites: Where two small worlds meet [J].
Balazs, Anna C. ;
Emrick, Todd ;
Russell, Thomas P. .
SCIENCE, 2006, 314 (5802) :1107-1110
[3]   One-step formation of functionalized block copolymers [J].
Benoit, D ;
Hawker, CJ ;
Huang, EE ;
Lin, ZQ ;
Russell, TP .
MACROMOLECULES, 2000, 33 (05) :1505-1507
[4]   Precursor route pentacene metal-insulator-semiconductor field-effect transistors [J].
Brown, AR ;
Pomp, A ;
deLeeuw, DM ;
Klaassen, DBM ;
Havinga, EE ;
Herwig, P ;
Mullen, K .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) :2136-2138
[5]   Organic thin-film transistors with nanocomposite dielectric gate insulator [J].
Chen, FC ;
Chu, CW ;
He, J ;
Yang, Y ;
Lin, JL .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3295-3297
[6]  
Dimitrakopoulos C. D., 2002, US Pat, Patent No. 6344662
[7]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[8]  
2-9
[9]   Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics [J].
Facchetti, A ;
Yoon, MH ;
Marks, TJ .
ADVANCED MATERIALS, 2005, 17 (14) :1705-1725
[10]   Pentacene organic thin-film transistors - Molecular ordering and mobility [J].
Gundlach, DJ ;
Lin, YY ;
Jackson, TN ;
Nelson, SF ;
Schlom, DG .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) :87-89