A CMOS voltage reference based on weighted ΔVGS for CMOS low-dropout linear regulators

被引:135
作者
Leung, KN [1 ]
Mok, PKT [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
关键词
CMOS voltage reference; line regulation; mobility; noise; power-supply rejection ratio; temperature coefficient; threshold voltage;
D O I
10.1109/JSSC.2002.806265
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS voltage reference, which is based on the weighted difference of the gate-source voltages of an NMOST and a PMOST operating in saturation region, is presented. The voltage reference is designed for CMOS low-dropout linear regulators and has been implemented in a standard 0.6-mum CMOS technology (V-thn approximate to \V-thp\ approximate to 0.9 V at 0 degreesC). The occupied chip area is 0.055 mm(2) The minimum supply voltage is 1.4 V, and the maximum supply current is 9.7 muA. A typical mean uncalibrated temperature coefficient of 36.9 ppm/degreesC is achieved, and the typical mean line regulation is +/-0.083%/V. The power-supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz are -47 and -20 dB, respectively. Moreover, the measured noise density with a 100-nF filtering capacitor at 100 Hz is 152 nV/rootHz and that at 100 kHz is 1.6 nV/rootHz.
引用
收藏
页码:146 / 150
页数:5
相关论文
共 17 条
[1]  
[Anonymous], 1990, VLSI DESIGN TECHNIQU
[2]  
*AUSTR MICR SYST I, 9933011 AUSTR MICR S
[3]   NEW NMOS TEMPERATURE-STABLE VOLTAGE REFERENCE [J].
BLAUSCHILD, RA ;
MULLER, RS ;
MEYER, RG ;
TUCCI, PA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (06) :767-774
[4]   Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits [J].
Filanovsky, IM ;
Allam, A .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2001, 48 (07) :876-884
[5]  
Johns D.A., 2008, Analog integrated circuit design
[6]  
Ka Nang Leung, 2001, ESSCIRC 2001. Proceedings of the 27th European Solid-State Circuits Conference, P88
[7]   ON THE TEMPERATURE-COEFFICIENT OF THE MOSFET THRESHOLD VOLTAGE [J].
KLAASSEN, FM ;
HES, W .
SOLID-STATE ELECTRONICS, 1986, 29 (08) :787-789
[8]  
Leung K.N., 2002, US Patent, Patent No. [6 441 680, 6441680]
[9]  
Leung KN, 2002, IEEE J SOLID-ST CIRC, V37, P526, DOI 10.1109/4.991391
[10]   MOS VOLTAGE REFERENCE BASED ON POLYSILICON GATE WORK FUNCTION DIFFERENCE [J].
OGUEY, HJ ;
GERBER, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :264-269