Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

被引：403

作者：

Filanovsky, IM ^{[1
]}

Allam, A ^{[1
]}

机构：

[1] Univ Alberta, Edmonton, AB T6G 2E1, Canada

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 2001年 / 48卷 / 07期

关键词：

device characterization; mobility; MOSFETs; threshold voltage; temperature effects; temperature sensors; voltage references;

D O I：

10.1109/81.933328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature, The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35-mum CMOS process.

引用

页码：876 / 884

页数：9

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