Input-free VTP and -VTN extractor circuits realized on the same chip

被引:13
作者
Filanovsky, IM [1 ]
机构
[1] Univ Alberta, Edmonton, AB T6G 2E1, Canada
关键词
MOSFETs; device characterization; threshold extractors;
D O I
10.1023/A:1008353815230
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The paper describes a self-biased CMOS transistor circuit with two outputs providing the transistor threshold voltages, V-TP and -V-TN. Both outputs are referenced to the same V-DD supply line, and hence, the circuit can be used as a convenient test device. The V-TP extractor is based on the "nested" connection of two transistors; the -V-TN extractor is designed using the difference of gate-source voltages in two different size transistors carrying equal currents. The circuit was realized in 0.8 mu m technology, and the results of simulation and experiment are compared. Recommendations to improve the design are given.
引用
收藏
页码:151 / 157
页数:7
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