MOCVD of Pb-based ferroelectric oxide thin films

Pb-based ferroelectric oxide thin films such as PbTiO3 and Pb(Zr,Ti)O-3 (PZT) were successfully prepared on Pt(111)/SiO2/Si(100) and Pt(100)/MgO(100) by MOCVD. The effects of the growth parameters on the film composition, crystalline structure and electrical properties were investigated. The large area growth and step coverage characteristics are also described. Energy-dispersive-type total reflection X-ray diffraction (ED-TXRD) and conventional theta-2 theta X-ray diffraction analyses were performed to characterize PbTiO3, PZT and Pt on MgO. PbTiO3, PZT and Pt were epitaxially grown on MgO and the in-plane film orientation was strongly dependent on that of Pt on MgO. it was also found that the lattice parameters of PbTiO3 in the PbTiO3/Pt/MgO structure were influenced by the film thickness. On the other hand, the lattice parameters of Pt were only slightly influenced by the film thickness of PbTiO3.