Valley Symmetry Breaking in Bilayer Graphene: A Test of the Minimal Model

被引：39

作者：

Nakamura, Masaaki ^{[1
]}

Castro, Eduardo V. ^{[2
,3
]}

Dora, Balazas ^{[4
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[3] Ctr Fis Porto, P-4169007 Oporto, Portugal

[4] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.103.266804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Physical properties reflecting the valley asymmetry of Landau levels in a biased bilayer graphene under a magnetic field are discussed. Within the 4-band continuum model with a Hartree-corrected self-consistent gap and finite damping factor we predict the appearance of anomalous steps in quantized Hall conductivity due to the degeneracy lifting of Landau levels. Moreover, the valley symmetry breaking effect appears as a nonsemiclassical de Haas-van Alphen effect where the reduction of the oscillation period to half cannot be accounted for through quasiclassical quantization of the orbits in reciprocal space.

引用

页数：4

共 22 条

[1] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].