Controlled Synthesis of CdSe Nanowires by Solution-Liquid-Solid Method

被引:82
作者
Li, Zhen [1 ]
Kurtulus, Oezguel [2 ]
Fu, Nan [1 ]
Wang, Zhe [1 ]
Kornowski, Andreas [1 ]
Pietsch, Ullrich [2 ]
Mews, Alf [1 ]
机构
[1] Univ Hamburg, Dept Phys Chem, D-20146 Hamburg, Germany
[2] Univ Siegen, Dept Phys, D-57072 Siegen, Germany
关键词
SOLUTION-BASED STRAIGHT; QUANTUM WIRES; SHAPE-CONTROL; II-VI; ALTERNATIVE ROUTES; SLS GROWTH; SEMICONDUCTOR; NANOCRYSTALS; MONODISPERSE; NANOSTRUCTURES;
D O I
10.1002/adfm.200900569
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconductor nanowires prepared by wet chemical methods are a relatively new field of 1D electronic systems, where the dimensions can be controlled by changing the reaction parameters using solution chemistry. Here, the solution-liquid-solid approach where the nanowire growth is governed by low-melting-point catalyst particles, such as Bi nanocrystals, is presented. In particular, the focus is on the preparation and characterization of CdSe nanowires, a material which serves a prototype structure for many kinds of low dimensional semiconductor systems. To investigate the influence of different reaction parameters on the structural and optical properties of the nanowires, a comprehensive synthetic study is presented, and the results are compared with those reported in literature. How the interplay between different reaction parameters affects the diameter, length, crystal structure, and the optical properties of the resultant nanowires are demonstrated. The structural properties are mainly determined by competing reaction pathways, such as the growth of Bi nanocatalysts, the formation and catalytic growth of nanowires, and the formation and uncatalytic growth of quantum dots. Systematic variation of the reaction parameters (e.g., molecular precursors, concentration and concentration ratios, organic ligands, or reaction time, and temperature) enables control of the nanowire diameter from 6 to 33 nm, while their length can be adjusted between several tens of nanometers and tens of micrometers. The obtained CdSe nanowires exhibit an admixture of wurtzite (W) and zinc blende (ZB) structure, which is investigated by X-ray diffraction. I The diameter-dependent band gaps of these nanowires can be varied between 650 and 700 nm while their fluorescence intensities are mainly governed by the Cd/Se precursor ratio and the ligands used.
引用
收藏
页码:3650 / 3661
页数:12
相关论文
共 57 条
[1]  
Caroff P, 2009, NAT NANOTECHNOL, V4, P50, DOI [10.1038/nnano.2008.359, 10.1038/NNANO.2008.359]
[2]   Solution-based growth and structural characterization of homo- and heterobranched semiconductor nanowires [J].
Dong, Angang ;
Tang, Rui ;
Buhro, William E. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (40) :12254-12262
[3]   Solution-liquid-solid (SLS) growth of ZnSe-ZnTe quantum wires having axial heterojunctions [J].
Dong, Angang ;
Wang, Fudong ;
Daulton, Tyrone L. ;
Buhro, William E. .
NANO LETTERS, 2007, 7 (05) :1308-1313
[4]   Twin-related branching of solution-grown ZnSe nanowires [J].
Fanfair, Dayne D. ;
Korgel, Brian A. .
CHEMISTRY OF MATERIALS, 2007, 19 (20) :4943-4948
[5]   Bismuth nanocrystal-seeded III-V semiconductor nanowire synthesis [J].
Fanfair, DD ;
Korgel, BA .
CRYSTAL GROWTH & DESIGN, 2005, 5 (05) :1971-1976
[6]  
FU N, UNPUB
[7]   Parameterization of the temperature dependence of the Debye-Waller factors [J].
Gao, HX ;
Peng, LM .
ACTA CRYSTALLOGRAPHICA SECTION A, 1999, 55 :926-932
[8]   Solution-Based II-VI Core/Shell Nanowire Heterostructures [J].
Goebl, Jim A. ;
Black, Robert W. ;
Puthussery, James ;
Giblin, Jay ;
Kosel, Thomas H. ;
Kuno, Masanu .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (44) :14822-14833
[9]   Solution-based straight and branched CdSe nanowires [J].
Grebinski, JW ;
Hull, KL ;
Zhang, J ;
Kosel, TH ;
Kuno, M .
CHEMISTRY OF MATERIALS, 2004, 16 (25) :5260-5272
[10]   Synthesis and characterization of Au/Bi Core/Shell nanocrystals: A precursor toward II-VI nanowires [J].
Grebinski, JW ;
Richter, KL ;
Zhang, J ;
Kosel, TH ;
Kuno, M .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (28) :9745-9751