Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals

被引：140

作者：

Fujii, M ^{[1
]}

Mimura, A

Hayashi, S

Yamamoto, Y

Murakami, K

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Tsukuba, Special Project Nanosci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.89.206805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic states of P donors in Si nanocrystals (nc-Si) embedded in insulating glass matrices have been studied by electron spin resonance. Doping of P donors into nc-Si was demonstrated by the observation of optical absorption in the infrared region due to intraconduction band transitions. P hyperfine structure (hfs) was successfully observed at low temperatures. The observed splitting of the hfs was found to be much larger than that of the bulk Si:P and depended strongly on the size of nc-Si. The observed strong size dependence indicates that the enhancement of the hyperfine splitting is caused by the quantum confinement of P donors in nc-Si.

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页码：206805 / 206805

页数：4

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