Atomic scale models of ion implantation and dopant diffusion in silicon

被引：34

作者：

Theiss, SK ^{[1
]}

Caturla, MJ ^{[1
]}

Johnson, MD ^{[1
]}

Zhu, J ^{[1
]}

Lenosky, T ^{[1
]}

Sadigh, B ^{[1
]}

de la Rubia, TD ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

THIN SOLID FILMS | 2000年 / 365卷 / 02期

关键词：

ion implantation; dopant diffusion; silicon; atomic scale model; trapping;

D O I：

10.1016/S0040-6090(00)00757-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First-principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self-interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：219 / 230

页数：12

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