Low noise figure (7.2dB) and high gain (29dB) semiconductor optical amplifier with a single layer AR coating

被引：26

作者：

Kelly, AE ^{[1
]}

Lealman, IF ^{[1
]}

Rivers, LJ ^{[1
]}

Perrin, SD ^{[1
]}

Silver, M ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 06期

关键词：

semiconductor optical amplifiers; semiconductor lasers;

D O I：

10.1049/el:19970346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An angled facet strained MQW semiconductor laser amplifier with integrated mode expanders has been designed and fabricated. A device with simple single layer antireflection coatings exhibited a maximum of 29dB fibre-to-fibre gain with a minimum noise figure of 7.2dB at 26dB gain and a saturation output power of 7.5dBm. This gain is equal to the highest reported for an SLA operating at 1.5 mu m while the noise performance is superior to that in any published work.

引用

页码：536 / 538

页数：3

共 3 条

[1] PASSIVE ALIGNMENT OF A TAPERED LASER WITH MORE THAN 50-PERCENT COUPLING EFFICIENCY [J].

COLLINS, JV ;

LEALMAN, IF ;

FIDDYMENT, PJ ;

JONES, CA ;

WALLER, RG ;

RIVERS, LJ ;

COOPER, K ;

PERRIN, SD ;

NIELD, MW ;

HARLOW, MJ .

ELECTRONICS LETTERS, 1995, 31 (09) :730-731

[2] Polarisation insensitive, 25dB gain semiconductor laser amplifier without antireflection coatings [J].

Kelly, AE ;

Lealman, IF ;

Rivers, LJ ;

Perrin, SD ;

Silver, M .

ELECTRONICS LETTERS, 1996, 32 (19) :1835-1836

[3] INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH 1.8-DB COUPLING LOSS TO CLEAVED SINGLEMODE FIBER [J].

LEALMAN, IF ;

RIVERS, LJ ;

HARLOW, MJ ;

PERRIN, SD .

ELECTRONICS LETTERS, 1994, 30 (20) :1685-1687

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