学术探索
学术期刊
新闻热点
数据分析
智能评审

Strong screening effect of photo-generated carriers on piezoelectric field in In0.13Ga0.87N/In0.03Ga0.97N quantum wells

被引：16
作者：
Li, Q
Xu, SJ
Xie, MH
Tong, SY
Zhang, XH
Liu, W
Chua, SJ
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China
[3] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 10A期
关键词：
InGaN; GaN; quantum well; quantum confined Stark effect; piezoelectric field;
D O I：
10.1143/JJAP.41.L1093
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the strong screening effect of photo-generated carriers on piezoelectric held induced by lattice mismatch strain in In0.13Ga0.87N/In0.03Ga0.97N Multiple quantum wells. Blue shifts as large as 83 meV and 120 meV of intrinsic transitions at 4 K and 80 K, respectively, are observed when excitation power is increased by two orders of magnitude. Self-consistent numerical calculations were carried out that involved simultaneously solving Schrodinger's and Poisson's equations in order to interpret the experimental data, Efficient screening of the huge piezoelectric field by photo-generated carriers in quantum well regions is demonstrated both experimentally and theoretically.
引用
收藏
页码：L1093 / L1095
页数：3
相关论文
共 17 条
[1]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[2]   Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190
[3]   COMPUTER SOLUTIONS TO SCHRODINGER EQUATION [J].
CHOW, PC .
AMERICAN JOURNAL OF PHYSICS, 1972, 40 (05) :730-&
[4]   Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J].
Della Sala, F ;
Di Carlo, A ;
Lugli, P ;
Bernardini, F ;
Fiorentini, V ;
Scholz, R ;
Jancu, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :2002-2004
[5]   High internal electric field in a graded-width InGaN/GaN quantum well:: Accurate determination by time-resolved photoluminescence spectroscopy [J].
Lefebvre, P ;
Morel, A ;
Gallart, M ;
Taliercio, T ;
Allègre, J ;
Gil, B ;
Mathieu, H ;
Damilano, B ;
Grandjean, N ;
Massies, J .
APPLIED PHYSICS LETTERS, 2001, 78 (09) :1252-1254
[6]   Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys [J].
Li, Q ;
Xu, SJ ;
Cheng, WC ;
Xie, MH ;
Tong, SY ;
Che, CM ;
Yang, H .
APPLIED PHYSICS LETTERS, 2001, 79 (12) :1810-1812
[7]  
MILLER DAB, 1988, OPTICAL NONLINEARITI, P325
[8]   Operating characteristics of GaAs-InGaAs self-biased piezoelectric S-SEEDs [J].
Moran, M ;
Rees, GJ ;
Woodhead, J .
IEE PROCEEDINGS-OPTOELECTRONICS, 1999, 146 (01) :31-34
[9]  
NAKAMURA S, 2000, BLUE LASER DIODE
[10]   Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures [J].
Osinski, M ;
Perlin, P ;
Eliseev, PG ;
Lee, J ;
Smagley, VA .
JOURNAL OF CRYSTAL GROWTH, 1998, 189 :803-807
12