Silicon monolithic microchannel-cooled laser diode array

被引：49

作者：

Skidmore, JA ^{[1
]}

Freitas, BL ^{[1
]}

Crawford, J ^{[1
]}

Satariano, J ^{[1
]}

Utterback, E ^{[1
]}

DiMercurio, L ^{[1
]}

Cutter, K ^{[1
]}

Sutton, S ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.126860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degrees C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm(2) is achieved cw at an emission wavelength of similar to 808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (C) 2000 American Institute of Physics. [S0003-6951(00)00827-5].

引用

页码：10 / 12

页数：3

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