Band gap states of copper phthalocyanine thin films induced by nitrogen exposure

被引：73

作者：

Sueyoshi, Tomoki ^{[1
]}

Kakuta, Haruya ^{[1
]}

Ono, Masaki ^{[1
]}

Sakamoto, Kazuyuki ^{[1
]}

Kera, Satoshi ^{[1
]}

Ueno, Nobuo ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

annealing; copper; diffusion; energy gap; exponential distribution; Gaussian distribution; molecular electronic states; organic compounds; organic semiconductors; organic-inorganic hybrid materials; semiconductor thin films; ultraviolet photoelectron spectra; ENERGY-LEVEL ALIGNMENT; ELECTRONIC-STRUCTURE; INTERFACES; OXYGEN;

D O I：

10.1063/1.3332577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of 1 atm N(2) gas exposure on the electronic states of copper phthalocyanine thin films was investigated using ultrahigh-sensitivity ultraviolet photoelectron spectroscopy. The highest occupied molecular orbital band of the film showed a drastic reversible change in the bandwidth and band shape as well as in the energy position upon repeated cycles of N(2) exposure and subsequent annealing. Furthermore, two types of gap-state densities with Gaussian and exponential distributions appeared after the exposure and disappeared due to the annealing. These changes are ascribed to a weak disorder in the molecular packing structure induced by N(2) diffusion into the film.

引用

页数：3

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