Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

被引：69

作者：

Al-Temimy, A. ^{[1
]}

Riedl, C. ^{[1
]}

Starke, U. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

SURFACES;

D O I：

10.1063/1.3265916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si depletion as in the conventional sublimation method, monolayer graphene evolves at significantly lower temperatures by depositing additional carbon, so that a degradation of the initial SiC surface quality can be avoided. The original, well ordered terrace structure of SiC (0001) is preserved, the graphene layers grow on top and show the typical linear pi-band dispersion. On SiC(000 (1) over bar) the graphene lattice is rotated by 30 degrees in comparison to the conventional UHV preparation method. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3265916]

引用

页数：3

共 20 条

[1] Electronic confinement and coherence in patterned epitaxial graphene
Berger, Claire
Song, Zhimin
Li, Xuebin
Wu, Xiaosong
Brown, Nate
Naud, Cecile
Mayou, Didier
Li, Tianbo
Hass, Joanna
Marchenkov, Atexei N.
Conrad, Edward H.
First, Phillip N.
de Heer, Wait A.
[J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
[2] Stable surface reconstructions on 6H-SiC(0001)
Bernhardt, J
Nerding, M
Starke, U
Heinz, K
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 207 - 211
[3] Epitaxially ideal oxide-semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (000(1)over-bar) SiC surfaces
Bernhardt, J
Schardt, J
Starke, U
Heinz, K
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1084 - 1086
[4] Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
Emtsev, K. V.
Speck, F.
Seyller, Th.
Ley, L.
Riley, J. D.
[J]. PHYSICAL REVIEW B, 2008, 77 (15):
[5] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
[6] A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
Frewin, Christopher L.
Coletti, Camilla
Riedl, Christian
Starke, Ulrich
Saddow, Stephen E.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 589 - 592
[7] The rise of graphene
Geim, A. K.
Novoselov, K. S.
[J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
[8] The growth and morphology of epitaxial multilayer graphene
Hass, J.
de Heer, W. A.
Conrad, E. H.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)
[9] Graphene-substrate interaction on 6H-SiC(000(1)over bar): A scanning tunneling microscopy study
Hiebel, F.
Mallet, P.
Varchon, F.
Magaud, L.
Veuillen, J-Y.
[J]. PHYSICAL REVIEW B, 2008, 78 (15)
[10] Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production
Jernigan, Glenn G.
VanMil, Brenda L.
Tedesco, Joseph L.
Tischler, Joseph G.
Glaser, Evan R.
Davidson, Anthony, III
Campbell, Paul M.
Gaskill, D. Kurt
[J]. NANO LETTERS, 2009, 9 (07) : 2605 - 2609

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