Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001)

被引：3

作者：

Li, CH ^{[1
]}

Sun, Y ^{[1
]}

Visbeck, SB ^{[1
]}

Law, DC ^{[1
]}

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 21期

关键词：

D O I：

10.1063/1.1523650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model system has been created which allows the surface and bulk contributions to the reflectance difference spectrum to be distinguished. In particular, an indium arsenide film, less than 10 Angstrom thick, has been grown on indium phosphide (001). Reflectance difference spectra of the InAs/InP surfaces were collected and compared to those of InP and InAs. It was found that the InAs/InP heterostructures exhibited electronic transitions between surface states characteristic of InAs (001), while retaining the surface-perturbed bulk transitions characteristic of InP (001). Furthermore, the optical anisotropy arising from the arsenic dimer bonds was shifted 0.2 eV higher for InAs/InP compared to that for InAs. This shift is proportional to 1/a(2), where a is the bulk lattice constant. (C) 2002 American Institute of Physics.

引用

页码：3939 / 3941

页数：3

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