Regimented placement of self-assembled Ge dots on selectively grown Si mesas

被引：97

作者：

Jin, G ^{[1
]}

Liu, JL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 24期

关键词：

D O I：

10.1063/1.126716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The control of positioning of self-assembled dots is critical for the fabrication of regimented arrays in signal processing applications. We report the controllable positioning of self-assembled Ge dots using selectively grown Si mesas as a template. The dependence of the dot arrangement on growth temperature and Ge thickness has been investigated. The experimental results show ability to control the positioning of Ge dots based on energetically preferential nucleation. The Ge dot growth on Si mesas is demonstrated to be a promising way to realize the placement of regimented arrays of self-assembled dots and even a single dot. This technique can be extended to other heterostructure growths. (C) 2000 American Institute of Physics. [S0003-6951(00)04124-3].

引用

页码：3591 / 3593

页数：3

共 16 条

[1] Feasibility study of the quantum XOR gate based on coupled asymmetric semiconductor quantum dots [J].

Balandin, A ;

Wang, KL .

SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (03) :509-518

[2] Size distribution of Ge islands grown on Si(001) [J].

Goryll, M ;

Vescan, L ;

Schmidt, K ;

Mesters, S ;

Luth, H ;

Szot, K .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :410-412

[3] Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates [J].

Jin, G ;

Liu, JL ;

Thomas, SG ;

Luo, YH ;

Wang, KL ;

Nguyen, BY .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2752-2754

[4] Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting [J].

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS ;

Zhang, W ;

Chou, SY .

APPLIED PHYSICS LETTERS, 1999, 74 (12) :1773-1775

[5] Lithographic positioning of self-assembled Ge islands on Si(001) [J].

Kamins, TI ;

Williams, RS .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1201-1203

[6] Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties [J].

Kim, ES ;

Usami, N ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1617-1619

[7] Spatial ordering of islands grown on patterned surfaces [J].

Lee, C ;

Barabasi, AL .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2651-2653

[8]

LENT CS, 1993, NANOTECHNOLOGY, V4, P19

[9] GROWTH OF SEMICONDUCTOR HETEROSTRUCTURES ON PATTERNED SUBSTRATES - DEFECT REDUCTION AND NANOSTRUCTURES [J].

MADHUKAR, A .

THIN SOLID FILMS, 1993, 231 (1-2) :8-42

[10] Logic in wire: Using quantum dots to implement a microprocessor [J].

Niemier, MT ;

Kogge, PM .

NINTH GREAT LAKES SYMPOSIUM ON VLSI, PROCEEDINGS, 1999, :118-121

← 1 2 →