Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

被引：135

作者：

Jin, G ^{[1
]}

Liu, JL

Thomas, SG

Luo, YH

Wang, KL

Nguyen, BY

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Motorola Inc, Semicond Technol, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the ability to arrange self-organized Ge islands on patterned Si (001) substrates. Selective epitaxial growth of Si is carried out with gas-source molecular beam epitaxy to form Si mesas followed by subsequent Ge growth. Self-aligned and regularly spaced Ge islands are formed on the < 110 >-oriented ridges of the Si stripe mesas. A mono-modal size distribution of the islands has been observed on the ridges. Using preferential nucleation sites allows us to place Ge islands at predetermined positions. The controlled arrangement of self-organized nanostructures offers the potential applications of island arrays for the implementation in nanoelectronics and quantum computation. (C) 1999 American Institute of Physics. [S0003-6951(99)02644-3].

引用

页码：2752 / 2754

页数：3

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