Electronic properties of junctions between aluminum and doped poly(3,4-ethylenedioxythiophene)

被引：24

作者：

Bantikassegn, W

Inganas, O

机构：

[1] Laboratory of Applied Physics, Dept. of Phys. and Msrmt. Technology, Linköping University

来源：

THIN SOLID FILMS | 1997年 / 293卷 / 1-2期

关键词：

metals; contacts; electrical properties and measurements;

D O I：

10.1016/S0040-6090(96)08958-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal contacts to poly(3-,4-ethylenediolcythiophenc) doped either with large polymeric anions such as poly(styrenesulphonate) or small anions like ClO4- have been studied by means of electrical characterization. The current-voltage characteristics and complex impedance spectroscopy show the poly(3-,4-ethylenedioxythiophene) (PEDOT)(large anion)/Al contacts to be described by an insulating layer in series with a layer depleted of charge carriers. With the PEDOT(small anion)/Al contacts, no interfacial insulating layer is detected in the measurements, but a depletion layer is observed.

引用

页码：138 / 143

页数：6

共 16 条

[1] FABRICATION AND CHARACTERIZATION OF SCHOTTKY GATE POLY(3-ALKYLTHIOPHENE) PLANAR FIELD-EFFECT TRANSISTORS [J].