Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

被引：120

作者：

Aryal, K. ^{[1
]}

Pantha, B. N. ^{[1
]}

Li, J. ^{[1
]}

Lin, J. Y. ^{[1
]}

Jiang, H. X. ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

基金：

美国国家科学基金会;

关键词：

current density; electrochemical electrodes; gallium compounds; hole mobility; hydrogen production; III-V semiconductors; indium compounds; photoconductivity; photoelectrochemical cells; wide band gap semiconductors; N-GAN; PHOTOELECTROLYSIS; ELECTROLYSIS; NITRIDE; ANODES; TIO2;

D O I：

10.1063/1.3304786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoelectrochemical effects in p-InxGa1-xN (0 < x < 0.22) alloys have been investigated. Hydrogen generation was observed in p-InGaN semiconducting electrodes under white light illumination with additional bias. It was found that p-InGaN alloys possess much higher conversion efficiencies than p-GaN. Time dependent photocurrent density characteristics showed that the stability of p-InGaN in aqueous HBr is excellent. The photocurrent density was found to increase almost linearly with hole mobility and excitation light intensity.

引用

页数：3

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