Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

被引：80

作者：

Fujii, K ^{[1
]}

Ohkawa, K ^{[1
]}

机构：

[1] Sci Univ Tokyo, Dept Appl Phys, Japan Sci & Technol Agcy, Nakamura Inhomogeneous Crystal Project,Shinju ku, Tokyo 1628601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期

关键词：

gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; p-type;

D O I：

10.1143/JJAP.44.L909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

引用

页码：L909 / L911

页数：3

共 9 条

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