Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation

被引:134
作者
Fujii, K
Karasawa, TK
Ohkawa, K
机构
[1] Sci Univ Tokyo, Dept Appl Phys, Japan Sci & Technol Agcy, Nakamura Inhomogeneous Crystal Project,Explorator, Tokyo 1628601, Japan
[2] Usio Inc, Lamp Co, Technol & Engn Div, Ctr Res & Dev, Himeji, Hyogo 6710224, Japan
[3] Sci Univ Tokyo, Dept Appl Phys, Shinjyuku Ku, Tokyo 1628601, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 16-19期
关键词
gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; water splitting;
D O I
10.1143/JJAP.44.L543
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode, in an electrolyte. The application of extra bias to a working electrode was required to obtain a sufficient volume of generated gas. The reactions at the GaN photoelectrode were both GaN decomposition and water oxiclization, simultaneously.
引用
收藏
页码:L543 / L545
页数:3
相关论文
共 9 条
  • [1] Band-edge Potentials of n-type and p-type GaN
    Beach, JD
    Collins, RT
    Turner, JA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (07) : A899 - A904
  • [2] Grenko JA, 2004, MRS INTERNET J N S R, V9
  • [3] Electrochemistry and photoetching of n-GaN
    Huygens, IM
    Strubbe, K
    Gomes, WP
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) : 1797 - 1802
  • [4] Photo-enhanced chemical wet etching of GaN
    Ko, CH
    Su, YK
    Chang, SJ
    Lan, WH
    Webb, J
    Tu, MC
    Cherng, YT
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 96 (01): : 43 - 47
  • [5] Electrochemical investigation of the gallium nitride-aqueous electrolyte interface
    Kocha, SS
    Peterson, MW
    Arent, DJ
    Redwing, JM
    Tischler, MA
    Turner, JA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (12) : L238 - L240
  • [6] Physical chemistry of semiconductor-liquid interfaces
    Nozik, AJ
    Memming, R
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) : 13061 - 13078
  • [7] Deep ultraviolet enhanced wet chemical etching of gallium nitride
    Peng, LH
    Chuang, CW
    Ho, JK
    Huang, CN
    Chen, CY
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (08) : 939 - 941
  • [8] Pourbaix M.., 1974, ATLAS ELECTROCHEMICA, V2nd, P97
  • [9] Highly anisotropic photoenhanced wet etching of n-type GaN
    Youtsey, C
    Adesida, I
    Bulman, G
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2151 - 2153