Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes

被引：8

作者：

Beerbom, M

Mayer, T

Jaegermann, W

Batchelor, DR

Schmeisser, D

机构：

[1] Tech Univ Darmstadt, Dept Mat Sci, Div Surface Sci, D-64287 Darmstadt, Germany

[2] Brandenburg Tech Univ Cottbus, Dept Appl Phys, Cottbus, Germany

来源：

ANALYTICAL AND BIOANALYTICAL CHEMISTRY | 2002年 / 374卷 / 04期

关键词：

GaAs; electrochemistry; aqueous electrolytes; surface engineering; semiconductor preparation; synchrotron;

D O I：

10.1007/s00216-002-1404-x

中图分类号：

Q5 [生物化学];

学科分类号：

071010 ; 081704 ;

摘要：

Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using high resolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. The spectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 are cathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.

引用

页码：650 / 653

页数：4

共 13 条

[1] Synchrotron-induced photoemission of emersed GaAs electrodes after electrochemical etching in Br2/H2O solutions [J].