Preparation and characterisation of amorphous Cu:7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition

被引：25

作者：

Kever, Thorsten ^{[1
]}

Nauenheim, Christian ^{[1
]}

Boettger, Ulrich ^{[1
]}

Waser, Rainer ^{[1
]}

机构：

[1] Univ Aachen, Inst Mat Elect Engn & Informat Technol 2 IWE2, D-52074 Aachen, Germany

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

关键词：

resistive switching; amorphous materials; physical vapor deposition; scanning electron microscopy;

D O I：

10.1016/j.tsf.2006.07.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a physical vapor deposition process for preparing amorphous Cu:Tetracyanoquinodimethane (Cu:TCNQ) thin films. Samples made by this co-evaporation process exhibit a smooth surface in the scanning electron microscope. Spectroscopic studies confirmed the formation of a charge transfer (CT) complex with a degree of CT of 0.68. Reproducible resistive switching is observed in a glass/NiCr/Al/Cu:TCNQ/Al sandwich structure. OFF/ON ratios of 10 to 10(2) and impedance values between 100 k Omega and 10 M Omega have been measured. Switching voltages for the prepared samples with a film thickness of around 100 run are in the range of 4 +/- 2 V and are fairly symmetrical. The devices have a life time of more than 10(4) switching cycles. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1893 / 1896

页数：4

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