Effect of Cu/(Zn plus Sn) ratio on the properties of co-evaporated Cu2ZnSnSe4 thin films

被引:108
作者
Babu, Suresh G. [1 ]
Kumar, Kishore Y. B. [1 ]
Bhaskar, Uday P. [1 ]
Vanjari, Sundara Raja [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India
关键词
Cu2ZnSnSe4; Thin films; Co-evaporation; Characterization; Solar cell absorber; CUINSE2;
D O I
10.1016/j.solmat.2009.09.005
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The effect of Cu/(Zn+Sn) ratio on the properties of Cu2ZnSnSe4 (CZTSe) thin films is investigated. CZTSe thin films with Cu/(Zn+Sn) ratio in the range 0.85-1.15 are deposited using 4-source co-evaporation technique onto glass substrates held at a substrate temperature T-s=623 K and post-deposition annealed at T-pa = 723 K for I h in the selenium atmosphere. Powder X-ray diffraction (XRD) patterns reveal that CZTSe films deposited with Cu/(Zn+Sn) ratio in the range 0.90-1.10 are single phase and polycrystalline. CZTSe films, deposited with Cu/(Zn+Sn) ratio of 0.85 contain ZnSe as secondary phase and films with ratio of 1.15 contain Cu2-xSe as the secondary phase. The films are found to exhibit kesterite structure. Band gap of the films is found to increase with decrease in Cu/(Zn+Sn) ratio. Electrical resistivity of the films is found to lie in the range 0.02-23-Omega-cm depending on Cu/(Zn+Sn) ratio. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:221 / 226
页数:6
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