Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient P-1 increases with the angle of incidence theta as P-1 similar to theta(2). The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors. (C) 1997 American Institute of Physics.