Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

被引:15
作者
Jacobs, K
Van Daele, B
Leys, MR
Moerman, I
Van Tendeloo, G
机构
[1] Ghent Univ, Dept Informat Technol, IMEC, B-9000 Ghent, Belgium
[2] Univ Antwerp, RUCA, B-2020 Antwerp, Belgium
[3] IMEC, B-3001 Louvain, Belgium
[4] Fund Sci Res, Flanders, Belgium
关键词
annealing; mirostructure; phase separation; multiple quantum wells; InGaN;
D O I
10.1016/S0022-0248(02)01847-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy to quantity the influence of various growth parameters on the optical properties and on the In incorporation, Decreasing the group III flux results in improved room temperature photoluminescence intensity. Introduction of 5 and 10s interrupts at the MQW interfaces gives rise to loss of In. High temperature capping of MQW with GaN Mu produces blackening of the layers for an In content exceeding 12% due to formation of In platelets. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:498 / 502
页数:5
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