Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

被引：41

作者：

Romano, LT

McCluskey, MD

Van de Walle, CG

Northrup, JE

Bour, DP

Kneissl, M

Suski, T

Jun, J

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[2] UI, Unipress, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase separation was found to occur in In0.33Ga0.67N/GaN multiple-quantum-well structures after annealing at 975 degrees C in a hydrostatic pressure of 5 kbar N-2 for 4 h. X-ray diffraction (XRD) spectra of the as-grown samples showed superlattice peaks that were replaced by a broad, single-phase peak after annealing. Transmission electron microscopy (TEM) images of the annealed samples show In-rich precipitates and voids that are found only within the quantum-well region. Both TEM and XRD measurements indicated that the formation of voids and second phases were suppressed after annealing in a hydrostatic pressure of 15 kbar. In addition, optical absorption measurements on these samples showed no indication of a peak at 2.65 eV that was observed in previous annealing studies. (C) 1999 American Institute of Physics. [S0003-6951(99)02351-7].

引用

页码：3950 / 3952

页数：3

共 21 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].