Surface dynamics using pulsed electron beams

被引:7
作者
Chan, ASY [1 ]
Jones, RG [1 ]
机构
[1] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
alkanes; copper; desorption induced by electronic transitions (DIET); electron bombardment; electron stimulated desorption (ESD); halogens; low index single crystal surfaces; molecular dynamics; single crystal surfaces; surface chemical reaction;
D O I
10.1016/S0039-6028(00)00032-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Line of sight time of flight has been used to measure the translational energy of ethene formed by dissociative electron attachment of adsorbed dihalocarbons (XCH2CH2Y) on Cu(111) at 100 K. A pulsed electron beam was used to generate low energy secondary electrons at the surface, which were the active agents in initiating the decomposition, XCH2CH2Y(ads) + e(-) --> XCH2CH2.(ads) + Y(chem) + e(-), XCH2CH2.(ads) --> C2H4(g) + X(chem). For 1,2-dichloroethane (DCE) adsorbed with a spacer layer of chemisorbed chlorine between it and the Cu(111)surface, the TOF data could be fitted using three Maxwell distributions with fast (960 K), slow (180 K) and diffusion ('20 K') components. For a single monolayer of DCE adsorbed directly on the clean Cu(111) surface the fast (1230 K) and slow (225 K) components increased in temperature, indicating that the copper surface was affecting the reaction. For 1-bromo-2-chloroethane the results were the same, consistent with both molecules dissociating via a common intermediate, ClC2H4.(ads). For 1,2-dibromoethane the intermediate is different, BrC2H4., and decomposition of a monolayer of this molecule on clean Cu(111) exhibited fast (1850 K) and slow (270 K) components, both higher than the corresponding temperatures for DCE. The dynamics of these reactions and the origin of the two Maxwell distributions are discussed in terms of the energy available within the radical, and from the formation of the chemisorbed halogen when the radical dissociates. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:232 / 237
页数:6
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