Asymmetric strain relaxation in patterned SiGe layers:: A means to enhance carrier mobilities in Si cap layers

被引：25

作者：

Buca, D. ^{[1
]}

Hollaender, B.

Feste, S.

Lenk, St.

Trinkaus, H.

Mantl, S.

Loo, R.

Caymax, M.

机构：

[1] Forschungszentrum Julich GmbH, Inst Bio & Nanosyst, D-52425 Julich, Germany

[2] Forschungszentrum Julich GmbH, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.2431702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain relaxation in patterned Si0.77Ge0.23 stripes grown on Si(001) by chemical vapour deposition was investigated after He+ ion implantation and annealing. Ion channeling measurements indicate asymmetric strain relaxation with a significantly higher residual strain parallel to the stripes than perpendicular to the stripes. These results are confirmed by plan view transmission electron microscopy showing a much higher density of misfit dislocations running along the stripes than across the stripes. Estimates based on a piezoresistivity model indicate significant enhancements of electron and hole mobilities for asymmetrically strained Si cap layers on such SiGe stripes. (c) 2007 American Institute of Physics.

引用

页数：3

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