EXTREMELY HIGH ELECTRON-MOBILITY IN SI/GEXSI1-X STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：227

作者：

MII, YJ ^{[1
]}

XIE, YH ^{[1
]}

FITZGERALD, EA ^{[1
]}

MONROE, D ^{[1
]}

THIEL, FA ^{[1
]}

WEIR, BE ^{[1
]}

FELDMAN, LC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, GexSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm2/V s was observed from a similar sample.

引用

页码：1611 / 1613

页数：3

共 13 条

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