Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

被引：18

作者：

Dietrich, B ^{[1
]}

Bukalo, V ^{[1
]}

Fischer, A ^{[1
]}

Dombrowski, KF ^{[1
]}

Bugiel, E ^{[1
]}

Kuck, B ^{[1
]}

Richter, HH ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 08期

关键词：

D O I：

10.1063/1.1555692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the deconvolution of measurements of inhomogeneous mechanical stress in silicon device structures obtained by UV micro-Raman spectroscopy. Due to the very small UV penetration depth of only 12 nm, averaging of stress over the depth is almost eliminated. Only the averaging of stress over the area of the laser spot remains. By deconvolution of the spectra and comparison with finite element simulations, it is now possible to extract information on mechanical stress from areas as small as 200 nm. Oppositely stressed regions in submicroscopic dimensions can be detected, which could not be detected in previous visible light measurements due to averaging. (C) 2003 American Institute of Physics.

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页码：1176 / 1178

页数：3

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