Electronic structure of ZnO wurtzite quantum wires

被引:18
作者
Xia, J. B.
Zhang, X. W.
机构
[1] CCAST, World Lab, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
关键词
D O I
10.1140/epjb/e2006-00093-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.
引用
收藏
页码:415 / 420
页数:6
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