Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal

被引：94

作者：

Chichibu, SF ^{[1
]}

Sota, T

Cantwell, G

Eason, DB

Litton, CW

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Waseda Univ, Dept Elect Engn & Comp Engn, Shinjuku Ku, Sendai, Miyagi 1698555, Japan

[3] Eagle Picher Ind, Miami, OK 74354 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 01期

关键词：

D O I：

10.1063/1.1527707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exciton-polariton structures in a high-quality bulk ZnO single crystal were resolved at 8 K by means of polarized photoreflectance (PR) and photoluminescence measurements. The energies of the PR resonances corresponded to those of the upper and lower exciton-polariton branches, where A, B, and C excitons couple simultaneously to an electromagnetic wave. Longitudinal-transverse splitting of ground-state exciton polaritons and resonances due to the first excited states of respective excitons were observed due to the large oscillator strength. Photoluminescence peaks due to the corresponding polarion branches were clearly resolved. The valence-band ordering was confirmed to be A-Gamma(9v), B-Gamma(7v)(u), and C-Gamma(7v)(l). (C) 2003 American Institute of Physics.

引用

页码：756 / 758

页数：3

共 22 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[3] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[4] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[5]

CARDONA M, 1969, SOLID STATE PHYS S, V11

[6] Exciton spectra of cubic and hexagonal GaN epitaxial films [J].

Chichibu, S ;

Okumura, H ;

Nakamura, S ;

Feuillet, G ;

Azuhata, T ;

Sota, T ;

Yoshida, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1976-1983

[7] Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth [J].

Chichibu, SF ;

Torii, K ;

Deguchi, T ;

Sota, T ;

Setoguchi, A ;

Nakanishi, H ;

Azuhata, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1576-1578

[8] Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy [J].

Chichibu, SF ;

Sota, T ;

Fons, PJ ;

Ivata, K ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B) :L935-L937

[9] Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy [J].

Chichibu, SF ;

Tsukazaki, A ;

Kawasaki, M ;

Tamura, K ;

Segawa, Y ;

Sota, T ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2002, 80 (16) :2860-2862

[10] Oscillator strengths of A, B, and C excitons in ZnO films -: art. no. 201310 [J].

Gil, B .

PHYSICAL REVIEW B, 2001, 64 (20)

← 1 2 3 →