Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes

Self-assembled monolayers of octadecylthiol (ODT) were reconstituted on freshly etched gallium arsenide (n-GaAs) for the electrochemical stabilization against decomposition of the surfaces (passivation) in aqueous buffers. The surface composition was evaluated by x-ray photoelectron spectroscopy to optimize the surface treatment before ODT deposition. Electrochemical properties of the monolayers were monitored by cyclic voltammetry and impedance spectroscopy. The impedance spectrum of the photoetched n-GaAs after the deposition of the ODT monolayer was stable in an aqueous electrolyte at pH=7.5 for more than 24 h within the sensitivity of our experimental technique. The effective passivation of GaAs surfaces is an essential step towards biosensor applications. (C) 2000 American Institute of Physics. [S0003-6951(00)01422-4].