Properties of a-Si:H film deposited by amplitude-modulated RF plasma chemical vapour deposition for thin film transistor

被引：7

作者：

Nakahigashi, T

Hayashi, T

Izumi, Y

Kobayashi, M

Kuwahara, H

Nakabayashi, M

机构：

[1] R and D Division, Nissin Electric Co., Ltd., Ukyo-ku, Kyoto 615

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期

关键词：

hydrogenated amorphous silicon film; amplitude-modulated RF plasma; uniformity of thickness; stress; hydrogen concentration; thin film transistor; electron mobility; threshold voltage;

D O I：

10.1143/JJAP.36.328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method of amplitude-modulated RF plasma enhanced chemical vapour deposition (p-CVD) has been used to deposit the a-Si:H film. Various properties of the deposited a-Si:H film such as uniformity of thickness, stress of film and hydrogen concentration in the film are studied. These him properties are improved in the case of amplitude-modulated RF p-CVD compared with the CW case, particularly at the high deposition rate, Further investigation has been carried out by constructing a bottom gate thin him transistor (TFT) device without an etch stop layer. The measured electron mobility and threshold voltage, are also improved up to the deposition rate of 32 nm/min by the method of amplitude modulated RF p-CVD at the modulation frequency of 68 kHz.

引用

页码：328 / 332

页数：5

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