INSITU OBSERVATION OF PARTICLE BEHAVIOR IN RF SILANE PLASMAS

被引:30
作者
SHIRATANI, M
MATSUO, S
WATANABE, Y
机构
[1] Department of Electrical Engineering, Kyushu University, Hakozaki Fukuoka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期
关键词
DUST; POWDER; PARTICLE; SILANE PLASMA; PLASMA CHEMICAL VAPOR DEPOSITION; AMORPHOUS SILICON; REACTION CONTROL; REACTION ENGINEERING; MIE SCATTERING; PLASMA PROCESS; CVD; PCVD;
D O I
10.1143/JJAP.30.1887
中图分类号
O59 [应用物理学];
学科分类号
摘要
In situ observation of growth and behavior of particles formed in rf discharges of silane gas is carried out by using a Mie scattering method together with an rf modulation method, in which the applied voltage is modulated by a low-frequency square wave. The observation reveals that particles have a growth time quite longer than their extinction time and also are charged up negatively to be trapped in the discharging space. The drastic suppression of the particle growth realized in square-wave-amplitude-modulated rf discharges can be explained by taking into account the above features and further falloff of time-averaged densities of short lifetime species by the rf modulation.
引用
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页码:1887 / 1892
页数:6
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