Role of Si/film interface in photovoltaic devices based on aromatic molecular films

被引：9

作者：

Komolov, A

Schaumburg, M

机构：

[1] Univ Copenhagen, Dept Chem, CISMI, DK-2100 Copenhagen, Denmark

[2] St Petersburg State Univ, Inst Phys Res, St Petersburg, Russia

来源：

SYNTHETIC METALS | 2000年 / 113卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

conducting polymer films; LB films; Si; opto-electric properties; light emitting diode;

D O I：

10.1016/S0379-6779(00)00180-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sandwich structures based on cast films of poly(3-dodecylthiophene) (PDDT) and multilayer Langmuir-Blodgett (LB) corbathiene films are studied under ambient conditions. The two types of the structures demonstrate similar photovoltaic properties. Photovoltage and photoconductivity are particularly distinguishable when n-Si substrate is used in the structures. Two photovoltaic components are observed: caused by light absorption in the film and caused by light absorption in n-Si substrate. Donor-acceptor interaction at film/n-Si interface superposed on rigid-band approach is used to suggest mechanisms of the phenomena observed. The mechanisms may be used in order to provide a low work function electrode for organic light emitting diodes. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：217 / 221

页数：5

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