Very thin single-walled carbon nanotubes self-assembled on 6H-SiC(0001) substrate by surface decomposition method

被引:5
作者
Zhang, Guoqiang
Hashimoto, Yoshitaka
Nakamura, Atsushi
Tanaka, Akira
Temmyo, Jiro
Matsui, Yoshio
机构
[1] Shizuoka Univ, Elect Res Inst, Photon Devices Lab, Hamamatsu, Shizuoka 4328011, Japan
[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 1-3期
关键词
carbon nanotube; SiC; transmission electron microscopy; surface decomposition; self-assemble; high temperature;
D O I
10.1143/JJAP.46.L53
中图分类号
O59 [应用物理学];
学科分类号
摘要
Vertically aligned carbon nanotubes (CNTs) have been synthesized by a surface decomposition method on 6H-SiC(0001) substrate with in-situ introduction of molecular hydrogen into a vacuum chamber. It has been found that very thin singlewalled carbon nanotubes (SWNTs) with a diameter around I nm are formed, which was proved to be caused by addition of molecular hydrogen by comparing the experimental results with and without introduction of molecular hydrogen. The result indicate the modified surface decomposition method by addition of molecular hydrogen may serve as an efficient way by which very thin SWNTs can be synthesized.
引用
收藏
页码:L53 / L56
页数:4
相关论文
共 17 条
[1]   Plasma-induced alignment of carbon nanotubes [J].
Bower, C ;
Zhu, W ;
Jin, SH ;
Zhou, O .
APPLIED PHYSICS LETTERS, 2000, 77 (06) :830-832
[2]   C60-RELATED TUBULES [J].
DRESSELHAUS, MS ;
DRESSELHAUS, G ;
SAITO, R .
SOLID STATE COMMUNICATIONS, 1992, 84 (1-2) :201-205
[3]  
Dresselhaus MS, 2001, CARBON NANOTUBES SYN
[4]   In situ substrate preparation for high-quality SiC chemical vapour deposition [J].
Hallin, C ;
Owman, F ;
Martensson, P ;
Ellison, A ;
Konstantinov, A ;
Kordina, O ;
Janzen, E .
JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) :241-253
[5]   HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].
IIJIMA, S .
NATURE, 1991, 354 (6348) :56-58
[6]   Structural (n, m) determination of isolated single-wall carbon nanotubes by resonant Raman scattering [J].
Jorio, A ;
Saito, R ;
Hafner, JH ;
Lieber, CM ;
Hunter, M ;
McClure, T ;
Dresselhaus, G ;
Dresselhaus, MS .
PHYSICAL REVIEW LETTERS, 2001, 86 (06) :1118-1121
[7]   Large-scale production of single-walled carbon nanotubes by the electric-arc technique [J].
Journet, C ;
Maser, WK ;
Bernier, P ;
Loiseau, A ;
delaChapelle, ML ;
Lefrant, S ;
Deniard, P ;
Lee, R ;
Fischer, JE .
NATURE, 1997, 388 (6644) :756-758
[8]   A formation mechanism of carbon nanotube films on SiC(0001) [J].
Kusunoki, M ;
Suzuki, T ;
Hirayama, T ;
Shibata, N ;
Kaneko, K .
APPLIED PHYSICS LETTERS, 2000, 77 (04) :531-533
[9]   Growth process of close-packed aligned carbon nanotubes on SiC [J].
Kusunoki, M ;
Honjo, C ;
Suzuki, T ;
Hirayama, T .
APPLIED PHYSICS LETTERS, 2005, 87 (10)
[10]   Aligned carbon nanotube film self-organized on a SiC wafer [J].
Kusunoki, M ;
Shibata, J ;
Rokkaku, M ;
Hirayama, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5B) :L605-L606